sod-723 plastic-encapsulate diodes cesd 5 v 0 d7 esd protection diode + description the cesd 5 v 0 d7 is designed to protect voltage sensitive components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z stand ? off voltage: 5.0 v z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) per human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 30 30 kv esd v oltage per human body model p er machine model 16 400 kv v total p ower d issipation on fr-5 b oard (note 1) p d 100 mw thermal resistance junction ? to ? ambient r ja 1250 / w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage t emperature r ange t j, t stg -55 ~ +150 stresses exceeding m aximum r atings may damage the device. maximum r atings are stress ratings only. functional operation above the reco mmended. operating conditions is no t implied. extended exposure to stresses above the r ecommended o perating c ond itions may affect device reliability. note 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. sod-723 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c max. capacitance @v r =0 and f =1mhz electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t i pp (a) + v c (v) @max i pp + p pk + (w) c (pf) device* device marking max max min max ma max max max typ CESD5V0D7 e2 5.0 1.0 6.2 7. 3 1.0 8.8 13.3 117 65 *other voltages available upon request. +surge current waveform per figure 1. note 2. v br is measured with a pulse test current i t at an ambient temperature of 25c. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
|
